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June/2004
MITSUBISHI SEMICONDUCTOR
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4851A HEMT (High Electron Mobility Transistor) is designed for use in S to K band amplifiers and oscillators. The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
High gain and High P1dB Glp=11dB , P1dB=14.5dBm (Typ.) @ f=12GHz
APPLICATION
S to K band power Amplifiers
Fig.1
QUALITY GRADE
GG
ORDERING INFORMATION
Tape & reel 3000pcs./reel
Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25C )
Ratings -5 -5 IDSS 100 125 -65~125
(Ta=25C )
Unit V V mA mW C C
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Synbol V(BR)GDO IDSS VGS(off) P1dB Glp Parameter
Gate to drain breakdown voltage Saturated drain current Gate to source cut-off voltage Output Power at 1dB gain Compression Linear Power Gain
Test conditions MIN. Ig=-10A VGS=0V,VDS=2.5V VDS=2.5V,ID=500A VDS=2.5V,ID=25mA f=12GHz VDS=2.5V,ID=25mA f=12GHz,Pin=-5dBm -5 35 -0.1 12 9
Limits TYP. -8 60 -0.8 14.5 11 MAX -120 -2.0 ---
Unit V mA V dBm dB
MITSUBISHI
(1/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Fig.1
Unit : mm Top
TWUXW
Side
b

Bottom

RWUYW
2.

G7 1AA
3.
c
1.
(c)
1.
2.
RWUYW TWUXW
(c)
2.
2.
c c
3.

c

Square shape electrode is Drain
c
from "A" side view
1. Gate 2. Source 3. Drain
MITSUBISHI
(2/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
TYPICAL CHARACTERISTICS
ID vs. VDS
70
(Ta=25C)
ID vs. VGS
80
VGS=-0.1V/STEP
60 VGS=0V
70
VDS=2V
DRAIN CURRENT ID(mA)
DRAIN CURRENTID(mA)
0 1 2 3 4 5
50 40
60 50 40 30 20 10 0 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
30 20 10 0
DRAIN TO SOURCE VOLTAGE VDS(V)
GATE TO SOURCE VOLTAGEVGS(V)
Po vs. Pin
20.00
20
Po vs. Pin
VDS=2V ID=10mA f=12GHz
Output Power Po (dBm)
15.00
Output Power Pout (dBm)
VDS=2.5V ID=25mA f=12GHz
15
10.00
10
5.00
5
0.00 -10
0
-5
0
5
10
-10
-5
0
5
10
Input Power Pin (dBm)
Input Power Pin (dBm)
MITSUBISHI
(3/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
S PARAMETERS
(Conditions : VDS=2.5V,ID=25mA,Ta=25deg.C)
f 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
(GHz) Magn.
S11 Angle 0.986 -16.1 0.959 -35.1 0.933 -47.6 0.898 -64.4 0.867 -76.5 0.840 -86.5 0.813 -96.0 0.792 -106.6 0.766 -114.9 0.744 -123.4 0.709 -133.5 0.658 -146.0 0.607 -160.7 0.561 176.4 0.523 151.0 0.542 123.0 0.598 95.1 0.679 70.3 0.760 51.1 0.827 35.4 0.890 21.0 0.921 10.8 0.932 2.6 0.933 -3.9 0.947 -9.0 0.947 -14.4
S21 Magn. Angle 6.558 165.2 6.385 148.7 6.118 136.8 5.865 123.4 5.505 112.8 5.187 103.8 4.891 94.8 4.710 83.6 4.538 74.9 4.500 66.5 4.514 57.5 4.549 47.0 4.589 36.3 4.607 20.9 4.547 7.2 4.470 -6.8 4.267 -21.7 3.880 -37.6 3.447 -51.9 3.005 -65.2 2.560 -80.4 2.187 -90.3 1.879 -100.1 1.555 -108.1 1.330 -114.7 1.146 -121.8
S12 Magn. Angle 0.015 79.0 0.028 65.3 0.040 56.6 0.050 46.8 0.058 38.6 0.064 32.3 0.069 26.7 0.073 18.8 0.077 14.2 0.083 10.6 0.092 3.1 0.099 -4.6 0.106 -12.3 0.113 -25.3 0.116 -36.3 0.120 -48.5 0.119 -59.8 0.113 -71.3 0.105 -83.2 0.094 -94.0 0.084 -106.2 0.074 -111.9 0.064 -117.3 0.056 -124.3 0.049 -127.9 0.042 -128.9
S22 Magn. Angle 0.539 -13.6 0.531 -30.0 0.525 -38.9 0.502 -49.8 0.498 -58.1 0.492 -63.8 0.487 -67.9 0.487 -74.3 0.486 -77.8 0.483 -81.1 0.468 -86.3 0.437 -91.4 0.392 -97.5 0.324 -109.3 0.241 -118.6 0.140 -131.0 0.030 -165.6 0.097 43.6 0.214 30.0 0.323 19.9 0.407 8.0 0.481 2.4 0.570 -2.3 0.625 -6.3 0.681 -7.6 0.730 -8.8
Gate
M
Source Reference Point
Reference Point
Drain Source
MITSUBISHI
(4/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
MITSUBISHI
(5/5)
June/2004

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